太阳集团tcy8722(中国)科技有限公司

黄浦

姓名: 黄浦

性别：男

研究方向：相变半导体

职称：副教授、副研究员

邮箱：arvin_huang@szu.edu.cn

座机：

个人简介

毕业于北京大学凝聚态物理专业，人工微结构和介观物理国家重点实验室，我们团队以实际应用为导向，聚焦真实半导体材料的光、电、力、自旋等一系列性质，着重关注材料的微结构演化和物态调控，借助高通量方法预测新结构，发现新现象和新效应，并设计新原理功能化器件，发展相关物理模型和算法模块。具有扎实的理论+实验复合背景，以及深厚的第一性原理计算和材料逆向设计方面的经验和工作积累，在国际著名刊物发表多篇高水平论文，包括Nature Communications, Science Advances, npj Computational Materials, Advanced Materials, ACS Nano, Advanced Functional Materials, Physical Review B, Journal of the American Chemical Society, Journal of Materials Chemistry A, Journal of Physical Chemistry Letters, Chemistry of Materials和Small等，担任APS, ACS, Nature及Wiley旗下多个国际著名期刊审稿人，主持国家/广东省自然科学基金、参与深圳市科技创新委多个科研项目。地址：我校沧海校区致腾楼927室邮箱：arvin_huang@szu.edu.cn欢迎对半导体物理、化学、程序设计等方面感兴趣的同学加入我们，尤其是面向EDA软件领域的TCAD模块研发，在这里你可以学到半导体领域最前沿的理论知识和技术方法，并有机会赴世界顶级学术机构和产业公司学习交流。

个人信息

Publication ListsYear 2022[1]	Zhuang Ma, Pu Huang*, Jin Li, Peng Zhang, Jiaxin Zheng, Wen Xiong, Fei Wang, Xiuwen Zhang, “Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers”, npj Comput. Mater. 8(1), 1-11 (2022)[2]	B. Liu, J. Li, G. Wang, F. Ye, H. Yan, M. Zhang, S.-C. Dong, L. Lu, P. Huang*, T. He*, P. Xu, H.-S. Kwok, G. Li*, “Lattice strain modulation toward efficient blue perovskite light-emitting diodes”, Science Advances, 8(38): eabq0138 (2022).[3]	Pu Huang, Zhuang Ma, Gui Wang, Wen Xiong, Peng Zhang, Yiling Sun, Zhengfang Qian, Xiuwen Zhang*, “Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes”, J. Mater. Chem. C 10(13), 5303-5310 (2022) Year 2021[1]	X. Rong, X. Chen, W. Chen, Yiguo Xu*, Pu Huang* and Xiuwen Zhang*, “Electrical Switch of Poisson’s Ratio in IV-VI Monolayers via Pseudophase Transitions”, J. Phys. Chem. Lett. 12, 3217-3223 (2021) [2]	Qiaojun Peng#, Dongyan Li#, Pu Huang#, Yangyang Ren, Zexin Li, Lejing Pi, Ping Chen, Menghao Wu, Xiuwen Zhang, Xing Zhou*, Tianyou Zhai*, “Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd7Te7Cl8O17 via Selenium-Induced Selective-Bonding Growth”, ACS Nano 15, 16525-16532 (2021) [3]	Pu Huang#, Xinbo Chen#, Peng Zhang#, Hongyi Sun, Shaogang Xu, Wen Xiong, Rui Wang*, Han Zhang*, Qihang Liu*, Xiuwen Zhang*, “Crystalline chirality and interlocked double hourglass Weyl fermion in polyhedra-intercalated transition metal dichalcogenides”, NPG Asia Mater. 13, 1-9 (2021) [4]	Le-Le Gong, Wen Xiong*, Yi-Qun Xie, Jie Hu, Pu Huang, Fei Wang, “The large photoresponse and high polarization sensitivity of Te-based optoelectronic devices with the adsorbed hydroxide ions”, Appl. Phys. Lett. 118, 221109 (2021) [5]	Fei Wang, Zhuang Ma, Yuting Wei, Pu Huang, Xiuwen Zhang, “Switchable electric polarization of phosphorene in mixed dimensional van der Waals heterostructure”, Appl. Surf. Sci. 563, 150276 (2021).                                                                                           Year 2020[1]	Y. Zhang#, P. Huang#, J. Guo#, R. Shi, W. Huang, Z. Shi, L. Wu, F. Zhang, L. Gao, C. Li, X. Zhang*, J. Xu* and H. Zhang*, “Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity”, Adv. Mater. 32, 2001082 (2020). [2]	Zhaowei Shu, Qiaojun Peng, Pu Huang#, Zhi Xu, Abdulsalam Aji Suleiman, Xiuwen Zhang, Xuedong Bai, Xing Zhou*, Tianyou Zhai*, “Growth of Ultrathin Ternary Teallite (PbSnS2) Flakes for Highly Anisotropic Optoelectronics”, Matter 2, 977-987 (2020).[3]	J. Hu, W. Xiong*, P. Huang*, Y. Wang, C. Cai and J. Wang, “First-principles study on strain-modulated negative differential resistance effect of in-plane device based on heterostructure tellurene”, Appl. Surf. Sci. 528, 146957 (2020).[4]	P. Huang, P. Zhang, S. Xu, H. Wang, X. Zhang*, and H. Zhang*, “Recent Advances in Two-Dimensional Ferromagnetism: Materials Synthesis, Physical Properties and Device Applications”, Nanoscale, 12, 2309-2327 (2020). [5]	P. Huang#, Z. Xia#, X. Gao, J. M. Rondinelli, X. Zhang*, H. Zhang, K. R. Poeppelmeier* and A. Zunger*, “Ferri-chiral Compounds with Potentially Switchable Dresselhaus Spin Splitting”, Phys. Rev. B 102, 235127 (2020).[6]	X. Chen, W. Chen, S. Yu, S. Xu, X. Rong, P. Huang*, X. Zhang*, and S.-H. Wei*, “Designing Dirac Semimetals with a Honeycomb Na3Bi-lattice via Isovalent Cation Substitution”, J. Mater. Chem. C, 8, 1257-1264 (2020).[7]	Abdulsalam Aji Suleiman, Pu Huang#, Bao Jin, Jizhou Jiang, Xiuwen Zhang, Xing Zhou*, Tianyou Zhai*, “Space-confined Growth of 2D InI Showing High Sensitivity in Photodetection”, Adv. Electron. Mater., 6, 2000284 (2020).[8]	Jing-Yu Mao, Zhi Zheng, Zi-Yu Xiong, Pu Huang, Guang-Long Ding, Ruopeng Wang, Zhan-Peng Wang, Jia-Qin Yang, Ye Zhou, Tianyou Zhai*, Su-Ting Han*, “Lead-free Monocrystalline Perovskite Resistive Switching Device for Temporal Information Processing”, Nano Energy, 71, 104616 (2020).                                                                 Year 2019[1]	W. Han#, P. Huang#, L. Li, F. Wang, P. Luo, K. Liu, X. Zhou, H. Li, X. Zhang, Y. Cui, and T. Zhai. “Two-dimensional Inorganic Molecular Crystals”, Nature Commun. 10, 1-10 (2019). [2]	J. Duan#, P. Huang#, K. Liu, B. Jin, A. A. Suleiman, X. Zhang, X. Zhou, and T. Zhai, “Growth of Highly Anisotropic 2D Ternary CaTe2O5 Flakes on Molten Glass”, Adv. Funct. Mater., 29, 1903216 (2019). [10]	Y. Zhang, F. Zhang, L. Wu, Y. Zhang, W. Huang, Y. Tang, L. Hu, P. Huang*, X. Zhang*, H. Zhang*, “Van der Waals Integration of Bismuth Quantum Dots-decorated Tellurium Nanotubes (Te@Bi) Heterojunctions and Plasma-Enhanced Optoelectronic Applications”, Small, 15, 1903233 (2019). [3]	W. Huang, Y. Zhang, Q. You, P. Huang*, Y. Wang, Z. N. Huang, Y. Ge, L. Wu, Z. Dong, X. Dai  Y. Xiang, J. Li, X. Zhang*, and H. Zhang*. “Enhanced Photodetection Properties of Tellurium@Selenium Roll-to-Roll Nanotube Heterojunctions”, Small, 15, 1900902 (2019).[4]	X. Chen, P. Huang, X. Zhu, S. Zhuang, H. Zhu, J. Fu, A. S. Nissimagoudar, W. Li, X. Zhang, L. Zhou, Y. Wang, Z. Lv, Y. Zhou, and S.-T. Han, “Keggin-Type Polyoxometalate Cluster As An Active Component For Redox-Based Nonvolatile Memory”, Nanoscale Horizons, 4, 697-704 (2019). [5]	X. Chen, X. Zhu, S. R. Zhang, J. Pan, P. Huang, C. Zhang, G. Ding, Y. Zhou, K. Zhou, V. A. L. Roy, and S.-T. Han, “Controlled Nonvolatile Transition in Polyoxometalates-Graphene Oxide Hybrid Memristive Devices”, Adv. Mater. Technol., 4, 1800551 (2019). [6]	X. Hu, P. Huang, K. Liu, B. Jin, X. Zhang, X. Zhang, X. Zhou, and T. Zhai, “Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity”, ACS Appl. Mater. & Inter., 11, 23353-23360 (2019).                                   Year 2018[1]	B. Jin#, P. Huang#, Q Zhang, X. Zhou, X. Zhang, L. Li, J. Su, H. Li, and T. Zhai, “Self-Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High-Performance Photodetectors”, Adv. Funct. Mater. 28, 1800181 (2018). [2]	X. Hu, P. Huang, B. Jin, X. Zhang, H. Li*, X. Zhou*, and T. Zhai*, “Halide-induced self-limited growth of ultrathin nonlayered Ge flakes for high-performance phototransistors”, J. Am. Chem. Soc. 140, 12909-12914 (2018).                                                                     Years before 2017[1] Yangyang Wang#, Pu Huang#, Meng Ye, Ruge Quhe, Yuanyuan Pan, Han Zhang, Hongxia Zhong, Junjie Shi, and Jing Lu, “Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene”, Chem. Mater. 29, 2191-2201 (2017). [2] Pu Huang, Jun-jie Shi, Ping Wang, Min Zhang, Yi-min Ding, Meng Wu, Jing Lu and Xin-qiang Wang, “Origin of the Wide Band Gap from 0.6 to 2.3 eV in InN Photovoltaic Material: Quantum Confinement from Surface Nanostructure”, J. Mater. Chem. A 4, 17412-17418 (2016). [3] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Xiong Cao, Meng Wu and Jing Lu, “Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure”, J. Phys. Chem. Lett. 7, 2888-2892 (2016). [4] Pu Huang, Hua Zong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Ying-ping He, Jing Lu and Xiao-dong Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect”, ACS Nano 9, 9276-9283 (2015).[5] Yi-min Ding, Jun-jie Shi, Congxin Xia, Min Zhang, Juan Du, Pu Huang, Meng Wu, Hui Wang, Yu-lang Cen and Shu-hang Pan, “Enhancement of Hole Mobility in InSe Monolayer via an InSe and Black Phosphorus Heterostructure”, Nanoscale 9, 14682- 14689 (2017). [6] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao and Meng Wu, “Modulation of Electronic and Optical Properties of ZnO by Inserting an Ultrathin ZnX(X = S, Se and Te) Layer to Form Short-Period (ZnO)5/(ZnX)1 Superlattice”, J. Alloy Compd. 711, 581-591 (2017).[7] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Meng Wu, Xiong Cao, Xin Rong, and Xinqiang Wang, “Improvement of p-Type Conductivity in Al-rich AlGaN Substituted by MgGa δ-Doping (AlN)m/(GaN)n (m≥n) Superlattice”, J. Alloy Compd. 686, 484-488 (2016). [8] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao, Meng Wu and Zhi-min Liao, “Breakthrough of the p-Type Doping Bottleneck in ZnO by Inserting an Ultrathin ZnX (X=S, Se and Te) Layer Doped with NX or AgZn”, J. Phys. D: Appl. Phys. 49, 095104 (2016). [9] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Meng Wu and Xiong Cao, Improvement of n-Type Conductivity in Hexagonal Boron Nitride Monolayers by Doping, Strain and Adsorption. RSC Adv. 6, 29190-29196 (2016). [10] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Improving p-type Doping Efficiency in Al0.83Ga0.17N Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice with MgGa-ON δ-Codoping: Role of O-atom in GaN Monolayer”, AIP Adv. 5, 017114 (2015). [11] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Ying-ping He and Xiong Cao, “Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-Doping (AlN)5(GaN)1: the Strain Effect”, J. Phys. D: Appl. Phys. 48, 475104 (2015). [12] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Ying-ping He and Xiong Cao, “Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON and 3ON-VAl Surface Defects”, J. Phys. Chem. C. 119, 21688-21693 (2015). [13] Xiong Cao, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Yi-min Ding and Meng Wu, “Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g‑C3N4, and g‑CN: Electric Field Effect”, J. Phys. Chem. C 120, 11299-11305 (2015). [14] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect”, Sci. Rep. 4, 6710 (2014). [15] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Tong-jun Yu, Bo Shen, Jing Lu and Xihua Wang, “Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (AlN)m/(GaN)n(m>n) Superlattice Substitution for Al-Rich AlGaN Disorder Alloy: Ultra-thin GaN Layer Modulation”, New J. Phys. 16, 113065-113087 (2014). [16] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Jing Lu and Xihua Wang, “Band Edge Modulation and Interband Optical Transition in AlN:MgAl-ON Nanotubes”, Mater. Res. Express 1, 025030 (2014).[17] Tie-Cheng Zhou, Jun-jie Shi, Min Zhang, Mao Yang, Hong-xia Zhong, Xin-he Jiang and Pu Huang, Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution. J. Phys. Chem. C 117, 16231-16237 (2013).